BFR91, BFR91A N-P-N bipolar silicon RF transistors

	Transistors are designed for application in satellite communication systems, wideband amplifiers, radar systems, high speed switches, HF oscillators. Plastic package SOT-37.
Pinouts: 1-Base, 2-Collector, 3-Emitter

Ratings

Symbol	Parameter, unit, test conditions	Limits
V_CB0	Collector- base voltage, V	15
V_CE0	Collector- emitter voltage, V	12
V_EB0	Emitter- base voltage, V	2
I_C	Collector current, mA	35
P_tot	Power dissipation, mW T_A= -45 to +60°C T_A= +70°C	300 200

Characteristics (T_A = 25°C)

Symbol	Parameter, unit, test conditions	Limits
		min	max
f_T	Transition frequency, GHz, I_E=30mA, V_CE= 5V BFR91 I_E=30mA, V_CE= 5V BFR91A	5.0 6.0
h_FE	DC current gain, I_E=30mA, V_CE= 5V BFR91 I_E=30mA, V_CE= 5V BFR91A	50 80
I_CBO	Collector cut-off current, nA, V_CB=10V		100
G_P	Power gain, dB, I_E=30mA, V_CE= 5V, f=500MHz BFR91 I_E=30mA, V_CE= 8V, f=800MHz BFR91A	15 12.5
F	Noise figure, dB I_E=30mA, V_CE= 5V, f=500MHz BFR91 I_E=30mA, V_CE= 8V, f=800MHz BFR91A		1.9 1.6
C_C	Collector capacitance, pF, V_CB=10V, f= 1MHz		0.9

Alternative KT3198B, KT3198G